Design av högpresterande icke-volatila minnen baserade på fasförändrade material

Tidsperiod: 2013-01-01 till 2015-12-31

Projektledare: Rajeev Ahuja

Finansiär: Vetenskapsrådet

Bidragstyp: Projektbidrag

Budget: 2 837 000 SEK

Chalcogenide films with reversible crystalline-amorphous phase transition have been commercialized as optical rewritable data-storage media (such as DVD-RW) for decades and are currently investigated as nonvolatile electronic storage to replace the conventional FLASH-memory. However, the difficulties in reducing the long switching time required to write and erase prototype devices as well as power consumption restrict their initial development as a competitive memory technology. Therefore, to overcome these problems and to get high-speed, low power consumption and good scaling characters of recording media, it is required to identify new and better Chalcogenide materials. Current studies to tune the property of Chalcogenide materials are generally based on empirical trials because the mechanism behind the utilization is unknown yet. With a combination of quantum mechanical (QM) calculations and experiments, the goal of this project is to reveal the physical mechanism and to tune the properties of Chalcogenide materials by QM calculations, and to synthesize and characterize new better-performance Chalcogenide films by experiments with the guidance of QM calculations. The results of this project will not only provide fundamental understanding of these technologically important phase-change materials, but also contribute to their practical applications.