Nanotråds-IGBA sensorteknik för detektion av enstaka joner

Tidsperiod: 2015-01-01 till 2018-12-31

Projektledare: Zhen Zhang

Finansiär: Vetenskapsrådet

Bidragstyp: Projektbidrag

Budget: 4 000 000 SEK

This project concerns the fundamentals of a novel electronic sensor device as well as of the sensing interface between device and electrolyte. The sensor will be able to detect and discriminate electronic signals caused by surface adsorption of different charged species with high sensitivity, high signal-to-noise ratio and short response time. The core of our sensor is a novel electronic device that integrates a nanowire (NW) array with an Ion-Gated Bipolar Amplifier (IGBA), i.e. NW-IGBA. The NW array will perform sensing with an enhanced sensitivity in a short response time. It will also be made ion-selective enough to differentiate between different charged species via novel surface management schemes combined with innovative sensing strategies. The IGBA represents a modified ion-sensitive field-effect transistor (ISFET) intimately merged with a bipolar transistor for instantaneous internal amplification of the FET channel current without generating additional noise. Hence, we will fabricate and characterize NW-IGBA with an optimum layout geometry for high charge sensitivity, an optimum internal current amplification and an effective latch-up control. We will use the reaction-diffusion theory to guide the device design for a minimum response time, establish a physical model for the device/electrolyte interface to improve sensitivity and control noise, and develop surface functionalization protocols and innovative sensing strategies for parallel ion-selective sensing.