Fonon- och tunnfilmsbaserad termoelektrisk generator-HotTEG

Tidsperiod: 2015-01-01 till 2018-12-31

Projektledare: Zhibin Zhang, Zhi-Bin Zhang

Finansiär: Vetenskapsrådet

Bidragstyp: Projektbidrag

Budget: 3 200 000 SEK

The best thermoelectric materials, i.e., Bi2Te3 and Sb2Te3, used in conventional thermoelectric generator (TEG) operating near to room temperature are characterized by their figure of merit ZT at about 1. They are environmentally harmful, expensive, and incompatible with complementary metal-oxide semiconductor (CMOS) technology in contrast to Si. However, Si has too low ZT (about 0.01) to be useful in thermoelectric application. The main purpose of this proposed project is to develop phononic engineering technology to modify Si thin films to boost ZT to around 0.4 for high-performance and low-cost TEGs operating near to room temperature. To achieve this goal, our proposed innovative solutions include phononic engineering of Si thin films of various crystallinities by means of the standard Si process technology and our carbon nanotubes technology built in the past one decade, investigation of thermoelectric properties of phononic engineered Si thin films on microdevice test structures, employing silicide scheme for reliable thermoelectric contacts and 3D integration for module construction. Since Si is an abundant material with a mature modern CMOS technology and is capable of being produced in large scale, the successful outcome of the project is expected to enable low-cost Si-based TEGs with potential to replace the conventional Bi2Te3-based counterparts for power generation, heating and cooling.