Ion Physics

The research in Ion Physics is studying how ions with high velocities interact in different materials.

Ion beams are used for analysis of materials, ranging from archeology and medicine to ultra thin surface coatings in optics or electronics and other applications. Our accelerators can also be used to actively change the properties of materials, or to structure samples at nanometer level. Fundamental research is carried out in the whole field, in order to meet future demands in the development and analysis of materials.

Research projects

Accelerator Mass Spectrometry (AMS) addresses isotope ratios, which for rare isotopes requires measurements with extreme sensitivity in the 10-15 range. We have a state-of-the-art facility involved in a number of AMS applications including 14C-dating for archeological research as well as various geological and environmental research niches using 10Be and 129I. Our biomedical AMS research group is at the forefront of international regenerative medicine research.

Ion beams also facilitate non-destructive, elemental composition analysis for virtually any solid material. This may be complemented with depth profile data in the nanometer length range or ion channelling, providing crystallographic information.

High energy ions are also routinely used to irradiate samples and to modify materials for tailor-made properties; an example is band gap modification of semiconductors.

In order to maintain our position on the leading edge of applied physics, fundamental research is carried out to better understand the ion-matter interaction mechanism. This provides us with unique capabilities to face future analytical challenges.

Material modification by ion beams

Ion beams can be used in a variety of ways to manipulate material properties. In the ion physics group we make use of ion implantation in mainly semiconducting materials to achieve specific dopant concentrations, or to create ohmic contacts in materials.

We can also use the technique to amorphize single crystalline materials and investigate e.g. their annealing behaviour.

Besides that, we can also test radiation hardness of materials, as e.g. electronic components on spacecrafts, since our accelerators can effectively simulate cosmic radiation.​

Selected publications

T. Chulapakorn, I. Sychugov, S.S. Suvanam, J. Linnros, D. Primetzhofer, and A. Hallén
MeV Ion Irradiation Effects on the Luminescence Properties of Si-nanoparticles
Physica Status Solidi C, 1-6 (2016) doi: 10.1002/pssc.201600077

Ion-beam based materials analysis (IBA)

When ions interact with solids, many different processes can occur depending on the ion species and the primary incident energy. Ions are scattered, recoiling target atoms can leave the samples, photons and electrons are emitted, and nuclear reactions may occur.

In our group we are performing all standard Ion-Beam Analysis methods in dedicated beamlines and experimental setups. We feature conventional Rutherford Backscattering Spectrometry (RBS) for non-destructive depth profiling, Elastic Recoil Detection Analysis (ERDA) for light element detection, Nuclear Resonance Analysis (NRA) for isotopic tracing as well as Particle Induced X-ray Emission (PIXE) for trace element analysis. These experiments can partially be performed using a micro-beam or investigating channelling in single crystalline materials.

Selected publications

D. Kiefer, L. Yu, E. Fransson, D. Primetzhofer, A. Amassian, M. Campoy-Quiles, and C. Müller
A Solution Doped Polymer Semiconductor: Insulator Blends for Thermoelectrics
Advanced Science (2016) 1600203 doi: 10.1002/advs.201600203

A. Wagner, S. Pullen, S. Ott, D. Primetzhofer
The potential of ion beams for characterization of metal-organic frameworks
Nucl. Instr. and Meth. B 371 (2016) 327 doi: 10.1016/j.nimb.2015.10.059

High-resolution depth profiling and crystallography

Due to the ongoing miniaturization as well as the increasing use of single crystalline materials in electronics we have set up a Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) system in order to perform depth profiling and crystallographic studies for samples which are far too thin to be profiled by conventional ion-beam based analysis.

By this method we are able to obtain information on film composition, homogeneity and crystallography down to 1 nm in thickness. As we employ extremely low beam doses, the investigations are virtually non-destructive.

This method has a not yet fully explored potential in future development of electronics and sensors.

Selected publications

P. Ström, P. Petersson, M. Rubel, D. Primetzhofer, S. Brezinsek et al.
Ion beam analysis of tungsten layers in EUROFER model systems and carbon plasma facing components
Nucl. Instr. and Meth. B 371 (2016) 355 doi: 10.1016/j.nimb.2015.09.024

Linnarsson, M., Hallén, A., Åström, J., Primetzhofer, D. et al.
New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector
Review of Scientific Instruments 83 (2012) 095107 doi: 10.1063/1.4750195

Fundamental research in ion-solid interaction

In order to refine and further develop the employed methods and to find new ways how ion beams can be of benefit for research and industry we are also investigating fundamental aspects of ion-solid interaction. This includes e.g. studies of cross sections for nuclear reactions, the deceleration of ions in solids at low energies, as well as crystallographic studies by ion beams.

Selected publications

Primetzhofer, D.
Electronic interactions of medium energy ions in hafnium dioxide
Physical Review A 89 (2014) 032711 doi: 10.1103/PhysRevA.89.032711

Primetzhofer, D.
Inelastic energy loss of medium energy H and He ions in Au and Pt: Deviations from velocity proportionality
Physical Review B 86 (2012) 094102 doi: 10.1103/PhysRevB.86.094102

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